2026.02.08 (일)

  • 맑음동두천 -13.7℃
  • 맑음강릉 -9.8℃
  • 맑음서울 -12.2℃
  • 맑음대전 -10.4℃
  • 맑음대구 -8.9℃
  • 맑음울산 -8.6℃
  • 광주 -7.2℃
  • 맑음부산 -7.5℃
  • 흐림고창 -6.4℃
  • 제주 -1.8℃
  • 맑음강화 -12.1℃
  • 맑음보은 -10.8℃
  • 흐림금산 -9.9℃
  • 맑음강진군 -5.0℃
  • 맑음경주시 -9.2℃
  • 맑음거제 -5.8℃
기상청 제공

경제

GT Advanced Technologies Introduces Silicon Carbide Furnace

[By NBC-1TV H. J Yook]GT Advanced Technologies (Nasdaq:GTAT), today introduced its new SiClone™100 silicon carbide (SiC) production furnace. The SiClone100 uses a sublimation growth technique capable of producing high quality semiconducting bulk SiC crystal that can be finished into wafers up to 100 millimeters in diameter. In its initial offering, the SiClone100 is targeted at customers that have developed their own hot zone, qualified a bulk crystal production recipe and are looking to begin volume production.

“GT‘s new SiClone100 furnace addresses the need in the power electronics industry for more high quality SiC material for use in advanced, high power, high frequency devices,” said Tom Gutierrez, GT’s president and CEO. “The SiClone100 lays the foundation for our SiC product roadmap that is expected over time to provide customers with access to a complete production environment including recipes, hot zones and consumables capable of producing up to eight-inch SiC wafers.”



배너

관련기사


배너
배너
배너
배너
배너
배너
배너
배너
배너
배너
배너
배너