[By NBC-1TV H. J Yook]GT Advanced Technologies (Nasdaq:GTAT), today introduced its new SiClone™100 silicon carbide (SiC) production furnace. The SiClone100 uses a sublimation growth technique capable of producing high quality semiconducting bulk SiC crystal that can be finished into wafers up to 100 millimeters in diameter. In its initial offering, the SiClone100 is targeted at customers that have developed their own hot zone, qualified a bulk crystal production recipe and are looking to begin volume production.

“GT‘s new SiClone100 furnace addresses the need in the power electronics industry for more high quality SiC material for use in advanced, high power, high frequency devices,” said Tom Gutierrez, GT’s president and CEO. “The SiClone100 lays the foundation for our SiC product roadmap that is expected over time to provide customers with access to a complete production environment including recipes, hot zones and consumables capable of producing up to eight-inch SiC wafers.”